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STM8362 Folha de dados(PDF) 2 Page - SamHop Microelectronics Corp.

Nome de Peças STM8362
Descrição Electrónicos  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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Fabricante Electrônico  SAMHOP [SamHop Microelectronics Corp.]
Página de início  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8362 Folha de dados(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
1.4
V
23
gFS
18
S
VSD
CISS
755
pF
COSS
81
pF
CRSS
67
pF
Qg
12
nC
14
nC
Qgs
18
nC
Qgd
20
tD(ON)
15
ns
tr
1.9
ns
tD(OFF)
4.1
ns
tf
ns
Gate-Drain Charge
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=20V,ID=6.6A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=6.6A
VDS=5V,ID=6.6A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=32V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=5.3A
29
33
45
m ohm
c
f=1.0MHz
c
VDS=20V,ID=6.6A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=2.0A
0.82
1.3
V
STM8362
www.samhop.com.tw
Nov,12,2009
2
nC
VDS=20V,ID=6.6A,VGS=4.5V
7.4
1.8
b
IS
Maximum Continuous Drain-Source Diode Forward Current
A
2.0
Ver 1.1



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