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AN4192 Folha de dados(PDF) 44 Page - STMicroelectronics |
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AN4192 Folha de dados(HTML) 44 Page - STMicroelectronics |
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44 / 47 page ![]() Conclusion AN4192 44/47 Doc ID 023820 Rev 1 Figure 56. Phase node spike - VOUT chart 4 Conclusion The main electrical parameters for correct MOSFET selection in VRM applications are QG and intrinsic capacitances for high-side FETs, while RDS(on), QRR and CGD are crucial for LS FETs. AM16918V1 |
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