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MA4SW410B Folha de dados(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MA4SW410B Folha de dados(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 6 page ![]() M/A-COM Products V3 MA4SW410B-1 HMIC™ Silicon PIN Diode Switch RoHS Compliant with Integrated Bias Network • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/ or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit- ment to produce in volume is not guaranteed. MA4SW410B-1 (SP4T) Electrical Specifications @ TAMB = +25 oC, 10mA Bias current 1.Typical switching speed measured from 10% to 90% of detected RF signal driven by TTL compatible drivers using RC output spiking network, R = 50 – 200Ω , C = 390 – 560pF. Note: Operation of the MA4SW410B-1 Operation of the HMIC Series of PIN switches is achieved by the simultaneous application of negative DC current to the low loss port and positive DC current to the remaining isolated switching ports per the Driver Connections table below. The control currents should be supplied by constant current sources. For insertion loss, -10mA bias results in approximately –2V, and for Isolation ,+10mA yields approximately +0.9V at the respective bias nodes. The backside area of the die is the RF and DC return ground plane. Driver Connections CONTROL LEVEL (DC CURRENT) CONDITION OF RF OUTPUT B2 B3 B4 B5 J1-J2 J1-J3 J1-J4 J1-J5 -10mA +10mA +10mA +10mA Low Loss Isolation Isolation Isolation +10mA -10mA +10mA +10mA Isolation Low Loss Isolation Isolation +10mA +10mA -10mA +10mA Isolation Isolation Low Loss Isolation +10mA +10mA +10mA -10mA Isolation Isolation Isolation Low Loss Parameter Frequency Minimum Nominal Maximum Units Insertion Loss 6 GHz - 0.80 1.0 dB 12 GHz - 1.00 1.2 dB 18 GHz - 1.40 1.6 dB Isolation 6 GHz 40 50 - dB 12 GHz 35 40 - dB 18 GHz 30 35 - dB Input Return Loss 6 GHz - 10 - dB 12 GHz - 15 - dB 18 GHz - 10 - dB Switching Speed1 - - 80 - ns |
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