M/A-COM Products

V3

MA4SW410B-1

HMIC™ Silicon PIN Diode Switch

RoHS Compliant

with Integrated Bias Network

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA-COM Technical Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

ADVANCED:

Data Sheets contain information regarding a product MA-COM Technical Solutions is

considering for development. Performance is based on target specifications, simulated results, and/

or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product MA-COM Technical Solutions

has under development. Performance is based on engineering tests. Specifications are typical.

Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-

ment to produce in volume is not guaranteed.

Parameter

Absolute Maximum

Operating Temperature

Storage Temperature

Junction Temperature

Applied Reverse Voltage

50V

RF Incident Power

+30dBm C.W.

1

Bias Current +25°C

± 40mA

Note:

1. Maximum

operating

conditions

for

a

combination of RF power, D.C. bias and

temperature:

Features

♦ Broad Bandwidth Specified up to 18 GHz

♦ Usable up to 26 GHz

♦ Integrated Bias Network

♦ Low Insertion Loss / High Isolation

♦ Rugged, Glass Encapsulated Construction

♦ Fully Monolithic

Description

The MA4SW410B-1 device is a SP4T broadband switch

with integrated bias network utilizing M/A-COM's

process, US Patent 5,268,310. This process allows the

incorporation of silicon pedestals that form series and

shunt diodes or vias by imbedding them in low loss,

low dispersion glass. By using small spacing between

elements, this combination of silicon and glass gives

HMIC devices low loss and high isolation performance

with exceptional repeatability through low millimeter

frequencies. Large bond pads facilitate the use of low

inductance

ribbon

bonds,

while

gold

backside

metallization allows for manual or automatic chip

bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders

or electrically conductive silver epoxy.

Yellow areas denote wire bond pads

Applications

These high performance switches are suitable for use

in multi-band ECM, Radar, and instrumentation control

circuits where high isolation to insertion loss ratios are

required. With a standard +5V/-5V, TTL controlled PIN

diode driver, 80nS switching speeds can be achieved.