IRFR datasheet(1/10 Pages) IRF

Nome de Peças	IRFR

Descrição Electrónicos	Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)

PDF	10 Pages

Scroll/Zoom	100%

Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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IRFR/U120N

HEXFET® Power MOSFET

S

D

G

VDSS = 100V

RDS(on) = 0.21Ω

ID = 9.4A

Description

5/11/98

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

9.4

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

6.6

A

IDM

Pulsed Drain Current

38

PD @TC = 25°C

Power Dissipation

48

W

Linear Derating Factor

0.32

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

91

mJ

IAR

Avalanche Current

5.7

A

EAR

Repetitive Avalanche Energy

4.8

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

3.1

RθJA

Junction-to-Ambient (PCB mount) **

–––

50

°C/W

RθJA

Junction-to-Ambient

–––

110

Thermal Resistance

D -P A K

T O -252 A A

I-P A K

TO -25 1A A

l Surface Mount (IRFR120N)

l Straight Lead (IRFU120N)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

PD - 91365B

www.irf.com

1

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