IRFN450 datasheet(1/6 Pages) IRF

Nome de Peças	IRFN450

Descrição Electrónicos	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A)

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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Product Summary

Part Number

BVDSS

RDS(on)

ID

IRFN450

500V

0.415

Ω

12A

Features:

s

Avalanche Energy Rating

s

Dynamic dv/dt Rating

s

Simple Drive Requirements

s

Ease of Paralleling

s

Hermetically Sealed

s

Surface Mount

s

Light-weight

N-CHANNEL

Provisional Data Sheet No. PD-9.418A

500 Volt, 0.415

Ω

Ω HEXFET

HEXFET technology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-stateresistancecom-

binedwithhightransconductance.

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits.

The Surface Mount Device (SMD-1) package represents

another step in the continual evolution of surface mount

technology. The SMD-1 will give designers the extra flex-

ibility they need to increase circuit board density. Inter-

national Rectifier has engineered the SMD-1 package to

meet the specific needs of the power market by increas-

ing the size of the termination pads, thereby enhancing

thermal and electrical performance.

IRFN450

HEXFET® POWER MOSFET

Absolute Maximum Ratings

Parameter

IRFN450

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

12.0

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

8.0

IDM

Pulsed Drain Current

48

PD @ TC = 25°C

Max. Power Dissipation

150

W

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

750

mJ

IAR

Avalanche Current

12.0

A

EAR

Repetitive Avalanche Energy

15.0

mJ

dv/dt

Peak Diode Recovery dv/dt

3.5

V/ns

TJ

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 seconds)

Weight

2.6 (typical)

g

oC

A

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Nº de peça semelhante - IRFN450

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International Rectifier	IRFN450	184Kb / 7P	POWER MOSFET SURFACE MOUNT(SMD-1)
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	IRFN450	185Kb / 7P	Simple Drive Requirements

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