IRFN450 datasheet(6/6 Pages) IRF

6 / 6 page

Case Outline and Dimensions — SMD-1

Repetitive Rating; Pulse width limited by

maximum junction temperature.

(see figure 11)

@ VDD = 50V, Starting TJ = 25°C,

EAS = [0.5 * L * (I

2) * [BVDSS/(BVDSS-VDD)]

Peak IL = 12A, VGS = 10V, 25 ≤ RG ≤ 200Ω

ISD ≤ 12A, di/dt ≤ 130 A/µs,

VDD ≤ BVDSS, TJ ≤ 150°C

Pulse width

≤ 300 µs; Duty Cycle ≤ 2%

K/W = °C/W

W/K = W/°C

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

9/96

IRFN450 Device

Fig. 13b — Basic Gate Charge Waveform

All dimensions in millimeters (inches)

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