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DMMT3904 Folha de dados(PDF) 2 Page - Diodes Incorporated

Nome de Peças DMMT3904
Descrição Electrónicos  MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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Fabricante Electrônico  DIODES [Diodes Incorporated]
Página de início  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMMT3904 Folha de dados(HTML) 2 Page - Diodes Incorporated

  DMMT3904 Datasheet HTML 1Page - Diodes Incorporated DMMT3904 Datasheet HTML 2Page - Diodes Incorporated DMMT3904 Datasheet HTML 3Page - Diodes Incorporated  
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DS30311 Rev. 3 - 2
2 of 3
DMMT3904W
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V(BR)CBO
60
¾
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICEX
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
Base Cutoff Current
IBL
¾
50
nA
VCE = 30V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain (Note 6)
hFE
40
70
100
60
30
¾
¾
300
¾
¾
¾
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage (Note 6)
VCE(SAT)
¾
0.20
0.30
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage (Note 6)
VBE(SAT)
0.65
¾
0.85
0.95
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
¾
4.0
pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
¾
8.0
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1.0
10
k
W
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio
hre
0.5
8
x 10-4
Small Signal Current Gain
hfe
100
400
¾
Output Admittance
hoe
1.0
40
mS
Current Gain-Bandwidth Product
fT
300
¾
MHz
VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
5.0
dB
VCE = 5.0V, IC = 100
mA,
RS = 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
¾
35
ns
VCC = 3.0V, IC = 10mA,
VBE(off) = -0.5V, IB1 = 1.0mA
Rise Time
tr
¾
35
ns
Storage Time
ts
¾
200
ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Fall Time
tf
¾
50
ns
Notes:
5. Short duration test pulse used to minimize self-heating effect.
6. The DC current gain, hFE, (matched at IC = 10mA and VCE = 1.0V) Collector Emitter Saturation Voltage, VCE(SAT), and Base
Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
Date Code Key
KJG = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K4A
Marking Information
Year
2002
2003
2004
2005
2006
2007
2008
Code
NP
R
S
T
UV



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