BC847C datasheet(2/3 Pages) DIODES

2 / 3 page

DS11108 Rev. 14 - 2

2 of 3

BC846A-BC848C

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 3)

BC846

BC847

BC848

V(BR)CBO

—

IC = 10

mA, IB = 0

Collector-Emitter Breakdown Voltage (Note 3) BC846

BC847

BC848

V(BR)CEO

—

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

BC846, BC847

(Note 3)

BC848

V(BR)EBO

——

IE = 1

mA, IC = 0

H-Parameters

Small Signal Current Gain

Current Gain Group A

Input Impedance

Current Gain Group A

Output Admittance

Current Gain Group A

Reverse Voltage Transfer Ratio

Current Gain Group

hfe

hie

hoe

hre

—

220

330

600

2.7

4.5

8.7

1.5x10-4

2x10-4

3x10-4

—

µS

—

VCE = 5.0V, IC = 2.0mA,

f = 1.0kHz

DC Current Gain

Current Gain Group A

(Note 3)

hFE

110

200

420

180

290

520

220

450

800

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage (Note 3)

VCE(SAT)

—

200

250

600

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage (Note 3)

VBE(SAT)

—

700

900

—mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage (Note 3)

VBE(ON)

580

—

660

—

700

770

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Cutoff Current (Note 3)

BC846

BC847

BC848

ICES

ICBO

—

5.0

µA

VCE = 80V

VCE = 50V

VCE = 30V

VCB = 40V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

100

300

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—3.0

—

VCB = 10V, f = 1.0MHz

Noise Figure

—

VCE = 5V, IC = 200µA,

RS = 2.0k

f = 1.0kHz,

Df = 200Hz

Notes:

3. Short duration pulse test used to minimize self-heating effect.

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