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FS0203G-2-AA3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças FS0203G-2-AA3-R
Descrição Electrónicos  SURFACE MOUNT SCR
PDF  4 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

FS0203G-2-AA3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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FS0203
SCR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R301-020. C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off State Voltage
(RGK=1kΩ)
FS0203-2
VDRM, VRRM
200
V
FS0203-4
400
V
FS0203-6
600
V
FS0203-8
800
V
FS0203-9
900
V
Average On-State Current (Note 1)
Half Cycle, θ=180 º
TTAB=95˚C
IT(AV)
1.25
A
On-State Current (Note 1)
Half Cycle, θ=180 º
TTAB=95˚C
IT(RMS)
0.8
A
Non-Repetitive On-State Current
Half Cycle, 60Hz,
TJ=25ºC
ITSM
25
A
Half Cycle, 50Hz,
TJ=25ºC
22.5
A
I
2t Value for Fusing
tp=10ms, Half Cycle
I
2t
2.5
A
2s
Peak Reverse Gate Voltage
IGR=10µA, TJ=25ºC
VGRM
8
V
Peak Gate Current
20µs max.
IGM
1.2
A
Peak Gate Power
20µs max.
PGM
3
W
Average Gate Power Dissipation
20ms max.
PG(AV)
0.2
W
Operating Junction Temperature
TJ
-40~+125
°C
Storage Junction Temperature
TSTG
-40~+150
°C
Soldering Temperature
10s max.
TSLD
260
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. With 5cm
2 copper (e=35μm) surface under tab.
THERMAL RESISTANCES
PARAMETER
SYMBOL
RATINGS
UNIT
Junction-Leads for DC
θJL
25
°C/W
Junction to Ambient
θJA
60
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Off-State Leakage Current
IDRM/IRRM
VD=VDRM, RGK=1KΩ, TJ=125ºC
500
µA
VR=VRRM, TJ=25ºC
5
µA
On-State Voltage
VTM
at IT=1.6A, tp=380µs, TJ=25ºC
1.45
V
On-State Threshold Voltage
VT(O)
TJ=125ºC
0.9
V
Dinamic Resistance
RD
TJ=125ºC
150
mΩ
Gate Trigger Current
IGT
VD=12VDC, RL=140Ω, TJ=25ºC
20
200
µA
Gate Trigger Voltage
VGT
VD=12VDC, RL=140Ω, TJ=25ºC
0.8
V
Gate Non-Trigger Voltage
VGD
VD=VDRM, RL=3.3KΩ, RGK=1KΩ, TJ=125°C
0.1
V
Holding Current
IH
IT=50mA, RGK=1KΩ, TJ=25ºC
5
mA
Latching Current
IL
IG=1mA, RGK=1KΩ, TJ=25ºC
6
mA
Critical Rate of Rise of Off-State
Voltage
dv/dt
VD=67%×VDRM, RGK=1KΩ, TJ=125°C
20
V/µs
Critical Rate of Current Rise
di/dt
IG=2xIGT, TR≤100ns, F=60Hz, TJ=125°C
50
A/µs



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