2NNPP06G-S08-R datasheet(4/6 Pages) UTC

4 / 6 page

2NNPP06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-781.B

ELECTRICAL CHARACTERISTICS(CONT.) (TA=25°C, unless otherwise specified)

FOR P-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=-250µA, VGS=0V

-60

Drain-Source Leakage Current

IDSS

VDS=-60V, VGS=0V

-0.5

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

+100

Reverse

VGS=-20V, VDS=0V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=-250µA

-1

-3

Static Drain-Source On-State Resistance (Note 1)

RDS(ON)

VGS=-10V, ID=-0.9A

0.4

Ω

VGS=-4.5V, ID=-0.8A

0.6

Ω

DYNAMIC PARAMETERS

Input Capacitance (Note 3)

CISS

VGS=0V, VDS=-25V,

f=1.0MHz

141

Output Capacitance (Note 3)

COSS

13.1

Reverse Transfer Capacitance (Note 3)

CRSS

10.8

SWITCHING PARAMETERS

Total Gate Charge (Note 3)

VGS=-10V, VDS=-30V,

ID=-0.9A

5.1

Gate to Source Charge (Note 3)

QGS

0.7

Gate to Drain Charge (Note 3)

QGD

0.7

Turn-ON Delay Time (Note 2, 3)

tD(ON)

VDD=-30V, ID=-1A, RG≈6Ω,

VGS=-10V

1.6

Rise Time (Note 2, 3)

2.3

Turn-OFF Delay Time (Note 2, 3)

tD(OFF)

Fall-Time (Note 2, 3)

5.8

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

TA=25°C (Note 2)

-1.42

Maximum Body-Diode Pulsed Current

ISM

TA=25°C (Note 3)

-6.03

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=-0.8A, VGS=0V

-0.85 -0.95

Notes: 1. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature

3. For design aid only, not subject to production testing

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