2NNPP06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-781.B

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

N-CHANNEL P-CHANNEL

Gate-Source Voltage

±20

±20

V

Drain-Source Voltage

60

-60

V

Drain Current

1.8

-1.42

A

Pulsed

7.1

-6.03

A

Power Dissipation

0.87

W

Derating

6.94

mW/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

144

°C/W

Notes: 1. Pulse width ≤ 300μs; duty cycle ≤ 2%. The pulse current is limited by the maximum junction temperature.

FOR N-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

60

V

Drain-Source Leakage Current

0.5

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1

3

V

Static Drain-Source On-State Resistance (Note 1)

0.25

Ω

0.35

Ω

DYNAMIC PARAMETERS

Input Capacitance (Note 3)

f=1.0MHz

166

pF

Output Capacitance (Note 3)

19.5

pF

Reverse Transfer Capacitance (Note 3)

8.7

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 3)

3.2

nC

Gate to Source Charge (Note 3)

0.67

nC

Gate to Drain Charge (Note 3)

0.82

nC

Turn-ON Delay Time (Note 2, 3)

1.8

ns

Rise Time (Note 2, 3)

1.4

ns

Turn-OFF Delay Time (Note 2, 3)

4.9

ns

Fall-Time (Note 2, 3)

2.0

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

1.8

A

Maximum Body-Diode Pulsed Current

7.1

A

Drain-Source Diode Forward Voltage(Note 1)

0.8 0.95

V