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IRFR/U2405 Folha de dados(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRFR/U2405 Folha de dados(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 8 page  IRFR/U2405 Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 56 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 40 A IDM Pulsed Drain Current 220 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 130 mJ IAR Avalanche Current 34 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings VDSS = 55V RDS(on) = 0.016Ω ID = 56A Description l Surface Mount (IRFR2405) l Straight Lead (IRFU2405) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated D-Pak I-Pak IRFR2405 IRFU2405 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount)* ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance 1 / 10 www.kersemi.com |
Nº de peça semelhante - IRFR/U2405 |
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Descrição semelhante - IRFR/U2405 |
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