BCP53 datasheet(2/5 Pages) ONSEMI

2 / 5 page

BCP53 Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

V(BR)CBO

−100

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−80

−

Vdc

Collector−Emitter Breakdown Voltage

(IC = −100 mAdc, RBE = 1.0 kW)

V(BR)CER

−100

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

− 5.0

−

Vdc

Collector−Base Cutoff Current

(VCB = − 30 Vdc, IE = 0)

ICBO

−

−100

nAdc

Emitter−Base Cutoff Current

(VEB = − 5.0 Vdc, IC = 0)

IEBO

−

−10

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = − 5.0 mAdc, VCE = − 2.0 Vdc)

All Part Types

(IC = −150 mAdc, VCE = − 2.0 Vdc)

BCP53, SBCP53

BCP53−10, SBCP53−10

BCP53−16, SBCP53−16

(IC = − 500 mAdc, VCE = − 2.0 Vdc)

All Part Types

hFE

100

−

250

160

250

−

Collector−Emitter Saturation Voltage

(IC = − 500 mAdc, IB = − 50 mAdc)

VCE(sat)

−

− 0.5

Vdc

Base−Emitter On Voltage

(IC = − 500 mAdc, VCE = − 2.0 Vdc)

VBE(on)

−

−1.0

Vdc

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = − 5.0 Vdc, f = 35 MHz)

−

MHz

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