PIC10F220ESLASHP datasheet(55/86 Pages) MICROCHIP

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DS41270E-page 53

PIC10F220/222

10.1

DC Characteristics: PIC10F220/222 (Industrial)

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise specified)

Operating Temperature -40×C

≤ TA ≤ +85°C (industrial)

Param

No.

Sym

Characteristic

Min

Typ(1)

Max

Units

Conditions

D001

VDD

Supply Voltage

2.0

5.5

See Figure 10-1

D002

VDR

RAM Data Retention Voltage(2)

1.5*

—

Device in Sleep mode

D003

VPOR

VDD Start Voltage

to ensure Power-on Reset

—

Vss

—

D004

SVDD

VDD Rise Rate

to ensure Power-on Reset

0.05*

—

V/ms

IDD

Supply Current(3)

D010

—

175

0.625

250

0.800

275

1.1

400

1.5

μA

VDD = 2.0V, Fosc = 4 MHz

VDD = 5.0V, Fosc = 4 MHz

VDD = 2.0V, Fosc = 8 MHz

VDD = 5.0V, Fosc = 8 MHz

IPD

Power-down Current(4)

D020

—

0.1

1.2

2.4

μA

VDD = 2.0V

VDD = 5.0V

IWDT

WDT Current(4)

D022

—

1.0

μA

VDD = 2.0V

VDD = 5.0V

These parameters are characterized but not tested.

Note

Data in the Typical (“Typ”) column is based on characterization results at 25

°C. This data is for design guidance only

and is not tested.

This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.

The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, bus

rate, internal code execution pattern and temperature also have an impact on the current consumption.

a) The test conditions for all IDD measurements in active operation mode are:

All I/O pins tri-stated, pulled to VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.

b) For standby current measurements, the conditions are the same, except that the device is in Sleep mode.

Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD

or VSS. The peripheral current is the sum of the base IPD and the additional current consumed when the peripheral is

enabled.

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