1) J-STD20 and JESD22

2) All devices tested under avalanche conditions for a time periode of 10ms

Final Data Sheet

2

Rev. 2.2, 2013-01-15

1

Description

Features



Revolutionary semiconductor material - Silicon Carbide



Benchmark switching behavior



No reverse recovery/ No forward recovery



Temperature independent switching behavior



High surge current capability



Pb-free lead plating; RoHS compliant



Qualified according to JEDEC



Breakdown voltage tested at 22 mA

2)



Optimized for high temperature operation

Benefits



System efficiency improvement over Si diodes



System cost / size savings due to reduced cooling requirements



Enabling higher frequency / increased power density solutions



Higher system reliability due to lower operating temperatures



Reduced EMI

Applications



Switch mode power supply



Power factor correction



Solar inverter



Uninterruptible power supply

Table 1

Key Performance Parameters

Parameter

Value

Unit

650

V

15

nC

3.5

µJ

10

A

Table 2

Pin Definition

Pin 1

Pin 2

Pin 3

n.c.

C

A

Type / ordering Code

Package

Marking

Related links

IDW10G65C5

PG-TO247-3

D1065C5

www.infineon.com/sic

IDW10G65C5

5

ThinQ!™ Generation 5 represents Infineon leading edge technology for the

SiC Schottky Barrier diodes. Thanks to the more compact design and thin-

wafer technology, the new family of products shows improved efficiency over

all load conditions, resulting from both the improved thermal characteristics

and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V

CoolMOS™ families: this ensures meeting the most stringent application

requirements in this voltage range.

1

2

3

1

2

3

CASE