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IDW10G65C5 Folha de dados(PDF) 5 Page - Infineon Technologies AG

Nome de Peças IDW10G65C5
Descrição Electrónicos  ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
PDF  11 Pages
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDW10G65C5 Folha de dados(HTML) 5 Page - Infineon Technologies AG

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5
th Generation thinQ!TM SiC Schottky Diode
IDW10G65C5
Electrical characteristics
Final Data Sheet
5
Rev. 2.2, 2013-01-15
4
Electrical characteristics
Table 5
Static characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
DC blocking voltage
VDC
650
–
–
V
IR= 0.18 mA, Tj = 25°C
Diode forward voltage
VF
–
1.5
1.7
IF= 10 A, Tj=25°C
–
1.8
2.1
IF= 10 A, Tj=150°C
Reverse current
IR
–
0.5
180
µA
VR=650 V, Tj=25°C
–
0.1
60
VR=600 V, Tj=25°C
–
2.0
1250
VR=650 V, Tj=150°C
Table 6
AC characteristics
Parameter
Symbol
Values
Unit
Note/Test Condition
Min.
Typ.
Max.
Total capacitive charge
Qc
–
15
nC
VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C.
Total Capacitance
C
–
300
–
pF
VR=1 V, f=1 MHz
–
40
–
VR=300 V, f=1 MHz
–
39
–
VR=600 V, f=1 MHz



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