SS510 datasheet(1/2 Pages) TAYCHIPST

Nome de Peças	SS510

Descrição Electrónicos	SURFACE MOUNT S CHOTTKY BARRIER RECTIFIERS

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Fabricante Electrônico	TAYCHIPST [Shenzhen Taychipst Electronic Co., Ltd]

Página de início	http://www.taychipst.com

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SS52 THRU SS510

20V-100V

5.0A

1 of 2

Web Site: www.taychipst.com

FEATURES

E-mail: sales@taychipst.com

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MECHANICAL DATA

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

·

Metal-Semiconductor junction with gard ring

Epitaxial construction

Low forward voltage drop

High current capability

The plastic material carries UL recognition 94V-0

For use in low vlotage, high frequency inverters,

free wheeling, and polarity protection applications

·

Case

Molded Plastic

Polarity:Color band denotes cathode

Weight: 0.007 ounces,0.21 grams

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

SYMBOL

SS52

SS53

SS54

SS55

SS56

SS58

SS510

UNIT

Maximum Recurrent Peak Reverse Voltage

VRRM

20

30

40

50

60

80

100

V

Maximum RMS Voltage

VRMS

14

21

28

35

42

56

70

V

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

V

Maximum Average Forward Rectified Current

0.375″（9.5mm) Lead Lengths

@TL=95 ℃

Peak Forward Surage Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load(JEDEC Method)

Maximum Forward Voltage at 5.0A DC

VF

0.45

0.55

0.6

V

Maximum DC Reverse Current

@TJ=25℃

at Rated DC Bolcking Voltage

@TJ=100℃

Typical Junction Capacitance (Note1)

CJ

pF

Typical Thermal Resistance (Note2)

R JA

℃/W

Operating Temperature Range

TJ

℃

Storage Temperature Range

TSTG

℃

0.85

15

I(AV)

IFSM

5.0

150

1.0

50

IR

350

10

-55 to +150

A

mA

NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC

0.7

500

2.Thermal resistance junction to ambient,

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