UT3416G-AE3-R datasheet(1/3 Pages) UTC

Nome de Peças	UT3416G-AE3-R

Descrição Electrónicos	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT3416

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-325.c

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UTC UT3416 is advanced n-channel enhancement

MOSFET which can provide the designer with the best combination

of excellent RDS (ON), low gate charge and low gate voltages as low

as 1.8V.When it is used as a load switch or in PWM application, the

UTC UT3416 can be considered as an ideal.

FEATURES

* VDS =20 V

* ID =6.5 A

* RDS(ON)<22 mΩ @VGS = 4.5 V

* RDS(ON) <26 mΩ @VGS = 2.5 V

* RDS(ON) <34 mΩ @VGS = 1.8 V

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT3416L-AE3-R

UT3416G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34S

L: Lead Free

G: Halogen Free

Nº de peça semelhante - UT3416G-AE3-R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Unisonic Technologies	UT3416G-AE3-R	163Kb / 3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	UT3416G-AE3-R	482Kb / 9P	N-Channel 30-V (D-S) MOSFET

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Descrição semelhante - UT3416G-AE3-R

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	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
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More results

UT3416G-AE3-R Folha de dados(PDF) 1 Page - Unisonic Technologies

UT3416G-AE3-R Folha de dados(HTML) 1 Page - Unisonic Technologies

Nº de peça semelhante - UT3416G-AE3-R

Descrição semelhante - UT3416G-AE3-R

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