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UT3416G-AE3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças UT3416G-AE3-R
Descrição Electrónicos  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3416G-AE3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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UT3416
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-325.c
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Ta=25°C)
ID
6.5
A
Pulsed Drain Current (Note 2)
IDM
30
A
Power Dissipation (Ta=25°C)(Note 3)
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Surface mounted on 1in
2 copper pad of FR4 board
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note)
θJA
85
125
°C/W
Note: Surface mounted on 1 in2 copper pad of FR4 board
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250µA
20
V
Drain-Source Leakage Current
IDSS
VGS =0V, VDS =16V
1
µA
VGS =±4.5V, VDS =0V
±1
µA
Gate-Source Leakage Current
IGSS
VGS = ±8V, VDS =0V
±10
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
0.4
0.6
1
V
On State Drain Current
ID(ON)
VGS =4.5V, VDS =5V
30
A
VGS=4.5V, ID =6.5A
18
22
mΩ
VGS =2.5V, ID =5.5A
21
26
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS =1.8V, ID =5A
26
34
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1160
pF
Output Capacitance
COSS
187
pF
Reverse Transfer Capacitance
CRSS
VGS =0V, VDS =10V, f =1MHz
146
pF
Gate Resistance
RG
VGS =0V , VDS =0V, f =1MHz
1.5
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
16
nC
Gate Source Charge
QGS
0.8
nC
Gate Drain Charge
QGD
VDS =10V,VGS =4.5V,ID =6.5A
3.8
nC
Turn-ON Delay Time
tD(ON)
6.2
ns
Turn-ON Rise Time
tR
12.7
ns
Turn-OFF Delay Time
tD(OFF)
51.7
ns
Turn-OFF Fall-Time
tF
VGS =5V, VDS =10V
RL =1.5Ω, RGEN =3Ω
16
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS =1A, VGS =0V
0.76
1
V
Maximum Body-Diode Continuous
Current
IS
2.5
A
Body Diode Reverse Recovery Time
tRR
17.7
ns
Body Diode Reverse Recovery Charge
QRR
IF =6.5A, dI/dt=100A/μs
6.7
nC
Note: Surface mounted on 1 in2 copper pad of FR4 board



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