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BSS138L-AL3-R Folha de dados(PDF) 1 Page - Unisonic Technologies |
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BSS138L-AL3-R Folha de dados(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-271.e N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. FEATURES * RDS(ON)=0.7Ω @ VGS=10V * RDS(ON)=1Ω @ VGS=4.5V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 BSS138L-AE2-R BSS138G-AE2-R SOT-23-3 S G D Tape Reel BSS138L-AL3-R BSS138G-AL3-R SOT-323 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
Nº de peça semelhante - BSS138L-AL3-R |
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Descrição semelhante - BSS138L-AL3-R |
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