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BSS138L-AL3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças BSS138L-AL3-R
Descrição Electrónicos  N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
PDF  3 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

BSS138L-AL3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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BSS138
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-271.e
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
DC
ID
0.22
A
Pulse
0.88
Power Dissipation
SOT-23-3
PD
0.36
W
SOT-323
0.15
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
SOT-23-3
θJA
350
/W
℃
SOT-323
833
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
50
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
72
mV/℃
Zero Gate Voltage Drain Current
IDSS
VDS=50V, VGS=0V
0.5
µA
VDS=30V, VGS=0V
0.1
Gate–Body Leakage, Forward
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=1m A
0.8
1.3
1.5
V
Gate Threshold Voltage Temperature
Coefficient
ΔVGS(TH)/ΔTJ ID=1mA, Referenced to 25°C
-2
mV/°C
Static Drain–Source On–Resistance
RDS(ON)
VGS=10 V, ID=0.22A
0.7
3.5
Ω
VGS=4.5 V, ID=0.22A
1.0
6.0
On-State Drain Current
ID(ON)
VGS=10 V, VDS=5V
0.2
A
Forward Transconductance
gFS
VDS=10V, ID=0.22A
0.12 0.5
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1MHz
27
pF
Output Capacitance
COSS
13
pF
Reverse Transfer Capacitance
CRSS
6
pF
SWITCHING PARAMETERS
(Note)
Total Gate Charge
QG
VDS=25V, VGS=10V, ID=0.22A
1.7
2.4
nC
Gate Source Charge
QGS
0.1
nC
Gate Drain Charge
QGD
0.4
nC
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.29A,VGS=10V,
RG=6Ω,
2.5
5
ns
Turn-ON Rise Time
tR
9
18
ns
Turn-OFF Delay Time
tD(OFF)
20
36
ns
Turn-OFF Fall-Time
tF
7
14
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS= 0V, IS=0.44A (Note)
0.8
1.4
V
Max. Diode Forward Current
IS
0.22
A
Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%



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