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MMDT3904L-AL6-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças MMDT3904L-AL6-R
Descrição Electrónicos  DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT3904L-AL6-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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MMDT3904
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-013.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
200
mA
Power Dissipation
PD
200
mW
Thermal Resistance, Junction to Ambient
θJA
625
℃
/W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10μA, IE = 0
60
V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1.0mA, IB = 0
40
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 10μA, IC = 0
5.0
V
Collector Cut-off Current
ICEX
VCE = 30V, VEB(OFF) = 3.0V
50
nA
Base Cut-off Current
IBL
VCE = 30V, VEB(OFF) = 3.0V
50
nA
ON CHARACTERISTICS (Note 1)
IC = 100μA, VCE = 1.0V
40
IC = 1.0mA, VCE = 1.0V
70
IC = 10mA, VCE = 1.0V
100
300
IC = 50mA, VCE = 1.0V
60
DC Current Gain
hFE
IC = 100mA, VCE = 1.0V
30
IC = 10mA, IB = 1.0mA
0.20
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 5.0mA
0.30
V
IC = 10mA, IB = 1.0mA
0.65
0.85
V
Base- Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 5.0mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COBO
VCB = 5.0V, f = 1.0MHz, IE = 0
4.0
pF
Input Capacitance
CIBO
VEB = 0.5V, f = 1.0MHz, IC = 0
8.0
pF
Input Impedance
hIE
1.0
10
KΩ
Voltage Feedback Ratio
HRE
0.5
8.0
×
10
-4
Small Signal Current Gain
HFE
100
400
Output Admittance
HOE
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
1.0
40
μS
Current Gain-Bandwidth Product
fT
VCE = 20V, IC = 10mA,
f = 100MHz
300
MHz
Noise Figure
NF
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
TD
35
ns
Rise Time
TR
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA
35
ns
Storage Time
TS
200
ns
Fall Time
TF
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
50
ns
Note: 1. Short duration test pulse used to minimize self-heating.



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