MJD210G-TN3-R datasheet(4/5 Pages) UTC

4 / 5 page

MJD210

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R213-001.C

TYPICAL CHARACTERISTICS (Cont.)

0.1

0.05 0.07

0.5

0.3

0.2

Temperature Current (A)

0.7

+1.5

+0.5

-0.5

-1.5

-2.5

+2.5

*Applies For IC/IB≤hEF/3

Collector Current, IC(A)

-2

-1

*θVC for VCE(SAT)

θVB for VBE

25℃ to 150℃

-55℃ to 25℃

25℃ to 150℃

-55℃ to 25℃

200

100

0.4

0.5

Capacitance

TJ=25℃

Cib

Cob

Reverse Voltage, VR (V)

0.01

0.3

Active Region Safe Operating Area

0.1

__ _ __ _Bonding Wire Limited

__ __ __ Thermally Limited @TC=25℃

(Singel Pulse)

_______ Second Breakdown Limited

Curves Aplly Below

Rated VCEO

Collector-Emitter Voltage, VCE (V)

100µ

500µ

1ms

5ms

TJ=150℃

There are two limitations on the power handling

ability of a transistor: average junction temperature

and second breakdown. Safe operating area curves

indicate IC-VCE limits of the transistor that must be

observed for reliable operation; i.e., the transistor must

not be subjected to greater dissipation than the curves

indicate.

The data of Fig. 9 is based on TJ(pk)=150℃; Tc is

variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk)150℃. TJ(pk) may be calculated from the data

in Figure 8. At high case temperatures, thermal

limitations will reduce the power that can be handled to

values less than the limitations imposed by second

breakdown.

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