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2SB880 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças 2SB880
Descrição Electrónicos  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB880 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB880
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A
·Wide Area of Safe Operation
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -2A
·Complement to Type 2SD1190
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
-6
A
Collector Power Dissipation
TC=25℃
30
PC
Collector Power Dissipation
Ta=25℃
1.75
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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