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2SB880 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB880 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞ -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA B -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A, IB= -4mA B -2.0 V ICBO Collector Cutoff Current VCB= -40V, IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A; VCE= -2V 2000 fT Current-Gain—Bandwidth Product IC= -2A; VCE= -5V 20 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 1.4 μs tf Fall Time RL= 10Ω, VCC≈ -20V IC= -2A; IB1= -IB2= -4mA 1.2 μs isc Website:www.iscsemi.cn |
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