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CY25404 Folha de dados(PDF) 7 Page - Cypress Semiconductor |
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CY25404 Folha de dados(HTML) 7 Page - Cypress Semiconductor |
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7 / 13 page ![]() CY25404 Document #: 001-43258 Rev. *C Page 7 of 13 AC Electrical Specifications Parameter Description Conditions Min Typ Max Unit FIN (crystal) Crystal frequency, XIN – 8 – 48 MHz FIN (clock) Input clock frequency, EXCLKIN – 8– 166 MHz FCLK Output clock frequency – 3 – 166 MHz DC1 Output duty cycle, All clocks except Ref Out Duty cycle is defined in Figure 3 on page 8; t1/t2, measured at 50% of VDD_CLK_BX 45 50 55 % DC2 Ref out duty cycle Ref In Min 45%, Max 55% 40 – 60 % TRF1 [1] Output rise/fall time Measured from 20% to 80% of VDD_CLK_BX, as shown in Figure 4 on page 8, CLOAD = 15 pF, Drive strength [00] –6.8 – ns TRF2 [1] Output rise/fall time Measured from 20% to 80% of VDD_CLK_BX, as shown in Figure 4 on page 8, CLOAD = 15 pF, Drive strength [01] –3.4 – ns TRF3 [1] Output rise/fall time Measured from 20% to 80% of VDD_CLK_BX, as shown in Figure 4 on page 8, CLOAD = 15 pF, Drive strength [10] –2.0 – ns TRF4 [1] Output rise/fall time Measured from 20% to 80% of VDD_CLK_BX, as shown in Figure 4 on page 8, CLOAD = 15 pF, Drive strength [11] –1.0 – ns TCCJ [1,2] Cycle-to-cycle jitter (peak) Configuration dependent. See Table 3 –100 – ps TLOCK [1] PLL lock time Measured from 90% of the applied power supply level –1 3 ms Table 3. Configuration Example for C-C Jitter Ref. Freq. (MHz) CLK1 Output CLK2 Output CLK3 Output CLK4 Output CLK5 Output Freq. (MHz) C-C Jitter Typ (ps) Freq. (MHz) C-C Jitter Typ (ps) Freq. (MHz) C-C Jitter Typ (ps) Freq. (MHz) C-C Jitter Typ (ps) Freq. (MHz) C-C Jitter Typ (ps) 14.3181 8.0 134 166 103 48 92 74.25 81 Not Used 19.2 74.25 99 166 94 8 91 27 110 48 75 27 48 67 27 109 166 103 74.25 97 Not Used 48 48 93 27 123 166 137 166 138 8 103 Recommended Crystal Specification for SMD Package Parameter Description Range 1 Range 2 Range 3 Unit FIN Crystal frequency 8 – 14 14 – 28 28 – 48 MHz R1 Maximum motional resistance (ESR) 135 50 30 CL Parallel load capacitance (device has internal load capacitance adjustment feature) 8 – 18 8 – 14 8 – 12 pF DL(max) Maximum crystal drive level 300 300 300 µW Recommended Crystal Specification for Thru-Hole Package Parameter Description Range 1 Range 2 Range 3 Unit FIN Crystal frequency 8 – 14 14 – 24 24 – 32 MHz R1 Maximum motional resistance (ESR) 90 50 30 CL Parallel load capacitance (device has internal load capacitance adjustment feature) 8 – 18 8 – 12 8 – 12 pF DL(max) Maximum crystal drive level 1000 1000 1000 µW |
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