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FSEZ1016AMY Folha de dados(PDF) 6 Page - Fairchild Semiconductor

Nome de Peças FSEZ1016AMY
Descrição Electrónicos  Primary-Side-Regulation PWM Integrated Power MOSFET
PDF  16 Pages
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FSEZ1016AMY Folha de dados(HTML) 6 Page - Fairchild Semiconductor

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© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSEZ1016A • Rev. 1.0.2
6
Electrical Characteristics (Continued)
VDD=15V and TA=-40°C~+125°C (TA=TJ), unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max. Units
Voltage-Error-Amplifier Section
VVR
Reference Voltage
2.475
2.500
2.525
V
VN
Green-Mode Starting Voltage on COMV Pin
fS=fOSC-2KHz, VVS=2.3V
2.8
V
VG
Green-Mode Ending Voltage on COMV Pin
fS=1KHz
0.8
V
IV-SINK
Output Sink Current
VVS=3V, VCOMV=2.5V
90
μA
IV-SOURCE
Output Source Current
VVS=2V, VCOMV=2.5V
90
μA
VV-HGH
Output High Voltage
VVS=2.3V
4.5
V
Internal MOSFET Section
DCYMAX
Maximum Duty Cycle
75
%
BVDSS
Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
600
V
∆BVDSS /∆TJ Breakdown Voltage Temperature Coefficient
ID=250μA, Referenced
to 25°C
0.6
V/°C
IS
Maximum Continuous Drain-Source Diode
Forward Current
1
A
ISM
Maximum Pulsed Drain-Source Diode
Forward Current
4
A
RDS(ON)
Static Drain-Source On-Resistance
ID=0.5A, VGS=10V
9.3
11.5
Ω
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V,
TC=25°C
1
μA
VDS=480V, VGS=0V,
TC=100°C
10
μA
tD-ON
Turn-On Delay Time
(3,4)
VDS=300V, ID=1.1A,
RG=25Ω
7
24
ns
tr
Rise Time
21
52
ns
tD-OFF
Turn-Off Delay Time
13
36
ns
tf
Fall Time
27
64
ns
CISS
Input Capacitance
VGS=0V, VDS=25V
fS=1MHz
130
170
pF
COSS
Output Capacitance
19
25
pF
Over-Temperature-Protection Section
TOTP
Threshold Temperature for OTP
140
°C
Notes:
3.
Pulse Test: pulse width ≦ 300μs; duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.



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