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10N60G-X-TF1-T Folha de dados(PDF) 3 Page - Unisonic Technologies |
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10N60G-X-TF1-T Folha de dados(HTML) 3 Page - Unisonic Technologies |
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3 / 8 page ![]() 10N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 8 www.unisonic.com.tw QW-R502-119.E ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =10A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 10 A Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A Reverse Recovery Time tRR 420 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 10A, dIF / dt = 100 A/µs (Note 1) 4.2 µC Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2% 2. Essentially independent of operating temperature |
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