10N60G-X-TF1-T datasheet(2/8 Pages) UTC

2 / 8 page

10N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-119.E

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

10N60-A

600

Drain-Source Voltage

10N60-B

VDSS

650

Gate-Source Voltage

VGSS

± 30

Avalanche Current (Note 2)

IAR

Continuous

Drain Current

Pulsed (Note 2)

IDM

Single Pulsed (Note 3)

EAS

700

Avalanche Energy

Repetitive (Note 2)

EAR

15.6

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

156

TO-220F/TO-220F1

Power Dissipation

TO-263

178

Junction Temperature

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C

4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

θJA

62.5

°C/W

TO-220

0.8

°C/W

TO-220F/TO-220F1

2.5

°C/W

Junction to Case

TO-263

θJC

0.7

°C/W

ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

10N60-A

BVDSS

VGS = 0V, ID = 250μA

600

Drain-Source Breakdown Voltage

10N60-B

BVDSS

VGS = 0V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

µA

Forward

VGS = 30 V, VDS = 0 V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS = -30 V, VDS = 0 V

-100

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID = 250 µA, Referenced to 25°C

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 4.75A

0.6

0.73

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

1570 2040 pF

Output Capacitance

COSS

166

215

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

150

Turn-Off Delay Time

tD(OFF)

144

300

Turn-Off Fall Time

VDD=300V, ID =10A, RG =25Ω

(Note 1, 2)

165

Total Gate Charge

Gate-Source Charge

QGS

6.7

Gate-Drain Charge

QGD

VDS=480V, ID=10A, VGS=10 V

(Note 1, 2)

18.5

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