CMPD3003

CMPD3003A

CMPD3003C

CMPD3003S

SURFACE MOUNT

LOW LEAKAGE

SILICON SWITCHING DIODE

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD3003 series

types are silicon switching diodes manufactured by the

epitaxial planar process, designed for switching appli-

cations requiring an extremely low leakage diode.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Continuous Reverse Voltage

VR

180

V

Average Forward Current

IO

200

mA

Continuous Forward Current

IF

600

mA

Peak Repetitive Forward Current

IFRM

700

mA

Peak Forward Surge Current, tp=1.0µs

IFSM

2.0

A

Peak Forward Surge Current, tp=1.0s

IFSM

1.0

A

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IR

VR=125V

1.0

nA

IR

VR=125V, TA=150°C

3.0

µA

IR

VR=180V

10

nA

IR

VR=180V, TA=150°C

5.0

µA

BVR

IR=5.0µA

200

V

VF

IF=1.0mA

0.62

0.72

V

VF

IF=10mA

0.72

0.83

V

VF

IF=50mA

0.80

0.89

V

VF

IF=100mA

0.83

0.93

V

VF

IF=200mA

0.87

1.10

V

VF

IF=300mA

0.90

1.15

V

CT

VR=0, f=1.0MHz

4.0

pF

The following configurations are available:

CMPD3003

SINGLE

MARKING CODE: LLO

CMPD3003A

DUAL, COMMON ANODE

MARKING CODE: LLA

CMPD3003C

DUAL, COMMON CATHODE

MARKING CODE: LLC

CMPD3003S

DUAL, IN SERIES

MARKING CODE: LLS

SOT-23 CASE

R4 (25-January 2010)

www.centra lsemi.com