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DMMT3906W Folha de dados(PDF) 2 Page - Diodes Incorporated

Nome de Peças DMMT3906W
Descrição Electrónicos  MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Fabricante Electrônico  DIODES [Diodes Incorporated]
Página de início  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMMT3906W Folha de dados(HTML) 2 Page - Diodes Incorporated

  DMMT3906W_2 Datasheet HTML 1Page - Diodes Incorporated DMMT3906W_2 Datasheet HTML 2Page - Diodes Incorporated DMMT3906W_2 Datasheet HTML 3Page - Diodes Incorporated DMMT3906W_2 Datasheet HTML 4Page - Diodes Incorporated  
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DS30312 Rev. 11 - 2
2 of 4
www.diodes.com
DMMT3906W
© Diodes Incorporated
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -10μA, IC = 0
Collector Cutoff Current
ICEX
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
Base Cutoff Current
IBL
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
(Note 7)
hFE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
(Note 7) VCE(SAT)
⎯
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
(Note 7) VBE(SAT)
-0.65
⎯
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Voltage Matching
ΔVBE
⎯
-1
mV
VCE = -5V, IC = -2mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
k
Ω
Voltage Feedback Ratio
hre
0.1
10
x 10
-4
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
3.0
60
μS
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
⎯
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
35
ns
Rise Time
tr
⎯
35
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
75
ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. The DC current gain, hFE, (matched at IC = -10mA and VCE = -1.0V) Collector Emitter Saturation Voltage, VCE(SAT),
and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.



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