SPD04P10PLG datasheet(2/9 Pages) INFINEON

Nome de Peças	SPD04P10PLG

Descrição Electrónicos	SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	INFINEON [Infineon Technologies AG]

Página de início	http://www.infineon.com

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2 / 9 page

SPD04P10PL G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - soldering point

R thJC

3.9

K/W

Thermal resistance,

junction - ambient

R thJA

minimal footprint,

steady state

6 cm

2 cooling area1),

steady state

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250 mA

-100

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-380 µA

-1

-1.5

-2

Zero gate voltage drain current

I DSS

V DS=-100 V, V GS=0 V,

T j=25 °C

-0.1

-1

µA

V DS=-100 V, V GS=0 V,

T j=150 °C

-10

-100

Gate-source leakage current

I GSS

V GS=-20 V, V DS=0 V

-10

-100

Drain-source on-state resistance

R DS(on)

V GS=-4.5 V, I D=-

2.75 A

787

1050

Ω

V GS=-10 V, I D=-3.0 A

550

850

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-3.0 A

1.5

3.0

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Values

Rev 1.

page 2

200

9-02-16

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