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SPD04P10PLG Folha de dados(PDF) 6 Page - Infineon Technologies AG

Nome de Peças SPD04P10PLG
Descrição Electrónicos  SIPMOS짰 Power-Transistor Features P-Channel Enhancement mode
PDF  9 Pages
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Fabricante Electrônico  INFINEON [Infineon Technologies AG]
Página de início  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPD04P10PLG Folha de dados(HTML) 6 Page - Infineon Technologies AG

  SPD04P10PLG Datasheet HTML 1Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 2Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 3Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 4Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 5Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 6Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 7Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 8Page - Infineon Technologies AG SPD04P10PLG Datasheet HTML 9Page - Infineon Technologies AG  
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SPD04P10PL G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-3 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-380 µA
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
typ.
98 %
0
500
1000
1500
2000
2500
-60
-20
20
60
100
140
180
T j [°C]
Ciss
Coss
Crss
10
3
10
2
10
1
0
5
10
15
20
25
-V DS [V]
typ.
min.
max.
0
1
2
3
-60
-20
20
60
100
140
180
T j [°C]
25 °C, typ
175 °C, typ
25 °C, 98%
175 °C, 98%
10
2
10
1
10
0
10
-1
10
-2
0
0.5
1
1.5
-V SD [V]
Rev 1.
5
page 6
200
9-02-16



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