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MCP14E3 Folha de dados(PDF) 13 Page - Microchip Technology |
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MCP14E3 Folha de dados(HTML) 13 Page - Microchip Technology |
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13 / 26 page ![]() © 2008 Microchip Technology Inc. DS22062B-page 13 MCP14E3/MCP14E4/MCP14E5 FIGURE 4-3: Enable Timing Waveform. 4.4 Decoupling Capacitors Careful layout and decoupling capacitors are highly recommended when using MOSFET drivers. Large currents are required to charge and discharge capacitive loads quickly. For example, 2.5A are needed to charge a 2200 pF load with 18V in 16 ns. To operate the MOSFET driver over a wide frequency range with low supply impedance, a ceramic and low ESR film capacitor are recommended to be placed in parallel between the driver VDD and GND. A 1.0 µF low ESR film capacitor and a 0.1 µF ceramic capacitor should be used. These capacitors should be placed close to the driver to minimized circuit board parasitics and provide a local source for the required current. 4.5 PCB Layout Considerations Proper PCB layout is important in a high current, fast switching circuit to provide proper device operation and robustness of design. PCB trace loop area and inductance should be minimized by the use of ground planes or trace under MOSFET gate drive signals, separate analog and power grounds, and local driver decoupling. Placing a ground plane beneath the MCP14E3/ MCP14E4/MCP14E5 will help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device. 4.6 Power Dissipation The total internal power dissipation in a MOSFET driver is the summation of three separate power dissipation elements. EQUATION 4-1: 4.6.1 CAPACITIVE LOAD DISSIPATION The power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load, and supply voltage. The power lost in the MOSFET driver for a complete charging and discharging cycle of a MOSFET is: EQUATION 4-2: TABLE 4-1: ENABLE PIN LOGIC MCP14E3 MCP14E4 MCP14E5 ENB_A ENB_B IN A IN B OUT A OUT B OUT A OUT B OUT A OUT B HHHH L L HH L H HHH L L HH L L L HH L H H L L HHH HH L L HH L L H L LL X X LLLLL L 5V 0V ENB_x VDD 0V OUT x VEN_H VEN_L 90% 10% tD3 tD4 P T P L P Q P CC ++ = Where: PT = Total power dissipation PL = Load power dissipation PQ = Quiescent power dissipation PCC = Operating power dissipation P L fC T × V DD 2 × = Where: f = Switching frequency CT = Total load capacitance VDD = MOSFET driver supply voltage |
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