MCP14E3 datasheet(1/26 Pages) MICROCHIP

Nome de Peças	MCP14E3

Descrição Electrónicos	4.0A Dual High-Speed Power MOSFET Drivers With Enable

PDF	26 Pages

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Fabricante Electrônico	MICROCHIP [Microchip Technology]

Página de início	http://www.microchip.com

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DS22062B-page 1

MCP14E3/MCP14E4/MCP14E5

Features

• High Peak Output Current: 4.0A (typical)

• Independent Enable Function for Each Driver

Output

• Low Shoot-Through/Cross-Conduction Current in

Output Stage

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• High Capacitive Load Drive Capability:

- 2200 pF in 15 ns (typical)

- 5600 pF in 26 ns (typical)

• Short Delay Times: 50 ns (typical)

• Latch-Up Protected: Will Withstand 1.5A Reverse

Current

• Logic Input Will Withstand Negative Swing Up To

5V

• Space-Saving Packages:

- 8-Lead 6x5 DFN, PDIP, SOIC

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Motor and Solenoid Drive

General Description

The MCP14E3/MCP14E4/MCP14E5 devices are a

family of 4.0A buffers/MOSFET drivers. Dual-inverting,

dual-noninvertering, and complementary outputs are

standard logic options offered.

The

MCP14E3/MCP14E4/MCP14E5

drivers

are

capable of operating from a 4.5V to 18V single power

supply and can easily charge and discharge 2200 pF

gate capacitance in under 15 ns (typical). They provide

low impedance in both the ON and OFF states to

ensure the MOSFET’s intended state will not be

affected, even by large transients. The MCP14E3/

MCP14E4/MCP14E5 inputs may be driven directly

from either TTL or CMOS (2.4V to 18V).

Additional

control

of

the

MCP14E3/MCP14E4/

MCP14E5 outputs is allowed by the use of separate

enable functions. The ENB_A and ENB_B pins are

active high and are internally pulled up to VDD. The pins

maybe left floating for standard operation.

The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A

driver family is offered in both surface-mount and pin-

through-hole packages with a -40°C to +125°C

temperature rating. The low thermal resistance of the

thermally enhanced DFN package allows for greater

power

dissipation

capability

for

driving

heavier

capacitive or resistive loads.

These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

spiking (of either polarity) occurs on the ground pin.

They can accept, without damage or logic upset, up to

1.5A of reverse current being forced back into their

outputs.

All

terminals

are

fully

protect

against

Electrostatic Discharge (ESD) up to 4 kV.

Package Types

ENB_A

IN A

GND

IN B

8-Pin

1

2

3

4

ENB_B

5

6

7

8

OUT A

OUT B

ENB_A

IN A

GND

IN B

VDD

Note 1: Exposed pad of the DFN package is electrically isolated.

MCP14E3

MCP14E4

ENB_B

OUT A

OUT B

VDD

MCP14E5

ENB_B

OUT A

OUT B

VDD

ENB_B

OUT A

OUT B

VDD

MCP14E3

MCP14E4

ENB_B

OUT A

OUT B

VDD

MCP14E5

ENB_B

OUT A

OUT B

VDD

PDIP/SOIC

8-Pin

6x5 DFN (1)

4.0A Dual High-Speed Power MOSFET Drivers With Enable

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