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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
HB IN
HB BIAS
HB OUT
LB SELECT
10
11
12
1
3
2
6
5
4
9
8
7
LB BIAS
HB SELECT
Logic
Control
RF2416
DUAL-BAND 2.7V LOW NOISE AMPLIFIER
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
The RF2416 is a dual-band low noise amplifier with
bypass switch designed for use as a front-end for
950MHz GSM and DCS1800/PCS1900 applications. It
may also be used for dual-band cellular/PCS application.
The 900MHz LNA is a single-stage amplifier with bypass
switch; the 1800/1900 LNA is a two-stage amplifier with
bypass switch. Both amplifiers have excellent noise figure
and high linearity in both high gain and bypass/low gain
mode. Thedeviceis packaged ina3mmx3 mm, 12pin,
leadless chip carrier.
• Low Noise and High Intercept Point
• Dual-Band Application GSM900 and
DCS1800/PCS1900
• Power Down Control
•Switchable Gain
RF2416
Dual-Band 2.7V Low Noise Amplifier
RF2416 PCBA
Fully Assembled Evaluation Board
4
Rev A2 010810
Dimensions in mm.
12°
max
1.00
0.85
3.00
sq.
1.25
0.95
sq.
2
0.30
0.18
0.50
0.23
0.13
4PLCS
0.80
0.65
NOTES:
Shaded Pin is Lead 1.
1
Dimension applies to plated terminal and is measured between 0.02 mm and
0.25 mm from terminal end.
2
5
Die thickness allowable: 0.305 mm max.
Package Warpage: 0.05 mm max.
4
Pin 1 identifier must exist on top surface of package by identification mark or
feature on the package body. Exact shape and size is optional.
3
0.65
0.30
4PLCS
0.60
0.24 typ
0.75
0.50
0.05
0.01
Package Style: LCC, 12-Pin, 3x3
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