PSMN011-80YS_1

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Objective data sheet

Rev. 01 — 26 February 2010

5 of 14

NXP Semiconductors

PSMN011-80YS

N-channel LFPAK 80 V 11 m

Ω standard level MOSFET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source

breakdown voltage

73

-

-

V

80

-

-

V

gate-source threshold

voltage

see Figure 10

1-

-

V

see Figure 10

--

4.6

V

see Figure 11 and 10

23

4V

drain leakage current

-

0.04

5

µA

-

-

100

µA

gate leakage current

-

-

100

nA

-

-

100

nA

drain-source on-state

resistance

see Figure 12

-19

26

m

Ω

see Figure 12

--

18

m

Ω

see Figure 12 and 13

-8

11

m

Ω

internal gate resistance

(AC)

f=1MHz

-

0.7

-

Ω

Dynamic characteristics

total gate charge

-

38

-

nC

see Figure 14 and 15

-45

-

nC

gate-source charge

-

13

-

nC

pre-threshold

gate-source charge

see Figure 14

-8

-nC

post-threshold

gate-source charge

-5

-nC

gate-drain charge

see Figure 14 and 15

-11

-

nC

gate-source plateau

voltage

see Figure 14 and 15

-4.9

-V

input capacitance

-

2800

-

pF

output capacitance

-

270

-

pF

reverse transfer

capacitance

-

146

-

pF

turn-on delay time

-23

-

ns

rise time

-

20

-

ns

turn-off delay time

-

40

-

ns

fall time

-

12

-

ns