PSMN011-80YS_1

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Objective data sheet

Rev. 01 — 26 February 2010

4 of 14

NXP Semiconductors

PSMN011-80YS

N-channel LFPAK 80 V 11 m

Ω standard level MOSFET

5.

Thermal characteristics

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aad343

10

-1

1

10

10

2

10

3

1

10

10

2

10

3

(A)

DC

100 ms

10 ms

1 ms

100 ms

10 ms

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to mounting

base

see Figure 4

-

0.5

1.3

K/W

Fig 4.

Transient thermal impedance from junction to mounting base as a function of pulse duration; typical

values

003a a d342

single shot

0.2

0.1

0.05

0.02

1

1

(K/W)

δ = 0.5