ADC1115S125 datasheet(8/35 Pages) NXP

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ADC1115S125_1

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Preliminary data sheet

Rev. 01 — 12 April 2010

8 of 35

NXP Semiconductors

ADC1115S125

11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs

10. Dynamic characteristics

10.1 Dynamic characteristics

[1]

Typical values measured at VDDA(3V) =3 V, VDDO = 1.8 V, VDDA(5V) =5V; Tamb =25 °C and CL = 5 pF; minimum and maximum values

are across the full temperature range Tamb = −40 °C to +85 °C at VDDA(3V) =3V, VDDO = 1.8 V, VDDA(5V) =5V, VINP − VINM = −1 dBFS;

internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified.

Table 7.

Dynamic characteristics[1]

Symbol

Parameter

Conditions

ADC1115S125

Unit

Min

Typ

Max

Analog signal processing

second harmonic level

fi =3MHz

dBc

fi =30MHz

dBc

fi =70MHz

dBc

fi =170 MHz

dBc

third harmonic level

fi =3MHz

dBc

fi =30MHz

dBc

fi =70MHz

dBc

fi =170 MHz

dBc

THD

total harmonic distortion

fi =3MHz

dBc

fi =30MHz

dBc

fi =70MHz

dBc

fi =170 MHz

dBc

ENOB

effective number of bits

fi =3MHz

10.7

bits

fi = 30 MHz

10.7

bits

fi = 70 MHz

10.7

bits

fi =170 MHz

10.6

bits

SNR

signal-to-noise ratio

fi =3MHz

66.2

dBFS

fi = 30 MHz

66.2

dBFS

fi = 70 MHz

66.0

dBFS

fi =170 MHz

65.8

dBFS

SFDR

spurious-free dynamic

range

fi =3MHz

dBc

fi =30MHz

dBc

fi =70MHz

dBc

fi =170 MHz

dBc

IMD

Intermodulation distortion

fi =3MHz

dBc

fi =30MHz

dBc

fi =70MHz

dBc

fi =170 MHz

dBc

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