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2SC3356 Folha de dados(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Nome de Peças 2SC3356
Descrição Electrónicos  NPN Silicon Plastic-Encapsulate Transistor
PDF  3 Pages
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Fabricante Electrônico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de início  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SC3356 Folha de dados(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  2SC3356 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH 2SC3356 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH 2SC3356 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
Elektronische Bauelemente
01-Jun-2002 Rev. A
Page
2 of 3
2SC3356
NPN Silicon
Plastic-Encapsulate Transistor
2
2SC3356
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
TA-Ambient Temperature-
°C
IC-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
0
5
10
15
0.5
1
5
10
50 70
IC-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1.0 GHz
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
VCB-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5 1.0
10
5.0
30
IC-Collector Current-mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
VCE = 10 V
0
10
20
0.1
0.2
0.4
0.6 0.81.0
2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
VCE = 10 V
IC = 20 mA
Gmax
|S21e|2
Free Air



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