2SC3356 datasheet(1/3 Pages) SECOS

Nome de Peças	2SC3356

Descrição Electrónicos	NPN Silicon Plastic-Encapsulate Transistor

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SECOS [SeCoS Halbleitertechnologie GmbH]

Página de início	http://www.secosgmbh.com

Logo

1 / 3 page

Any changing of specification will not be informed individual

2SC3356

NPN Silicon

Plastic-Encapsulate Transistor

FEATURES

http://www.SeCoSGmbH.com

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (Tamb =25 C unless o

o

therwise specified)

0.2

0.1

W

IC

Collector Current -Continuous

A

01-Jun-2002 Rev. A

Page 1 of

3

MAXIMUM RATINGS* TA=25 unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

20

12

3

TJ, Tstg

Junction and Storage Temperature

-55~150

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

PC

Collector Dissipation

V

C

o

Power Dissipation

n

RoHS Compliant Product

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1.BASE

2.EMITTER

3.COLLECTOR

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=10

µA, IE=0

20

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic= 1mA, IB=0

12

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10µA, IC=0

3

V

Collector cut-off current

ICBO

VCB= 10 V ,

IE=0

1

µA

Emitter cut-off current

IEBO

VEB= 1V ,

IC=0

1

µA

DC current gain

hFE

VCE= 10V, IC= 20mA

50

300

Transition frequency

fT

VCE=10V, IC= 20mA

6

GHz

Noise figure

F

VCE=10V, IC= 7mA, f = 1GHz

2

dB

CLASSIFICATION OF hFE

Marking

R23

R24

R25

Rank

Q

R

S

Range

50-100

80-160

125-250

A suffix of "-C" specifies halogen & lead-free

Nº de peça semelhante - 2SC3356

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
NEC	2SC3356	102Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)
Unisonic Technologies	2SC3356	105Kb / 3P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Guangdong Kexin Industr...	2SC3356	39Kb / 1P	NPN Silicon Epitaxial Transistor
Weitron Technology	2SC3356	430Kb / 3P	High-Frequency Amplifier Transistor NPN Silicon
Unisonic Technologies	2SC3356	197Kb / 4P	HIGH FREQUENCY LOW NOISE AMPLIFIER

More results

Descrição semelhante - 2SC3356

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
SeCoS Halbleitertechnol...	2SC3052	352Kb / 3P	NPN Silicon Plastic-Encapsulate Transistor
SeCoS Halbleitertechnol...	A44	314Kb / 3P	NPN Silicon Plastic-Encapsulate Transistor
Micro Commercial Compon...	2SD669	280Kb / 2P	NPN Silicon Plastic-Encapsulate Transistor
	MS8050-L	224Kb / 3P	NPN Silicon Plastic-Encapsulate Transistor
	MMS9014-L	189Kb / 2P	NPN Silicon Plastic-Encapsulate Transistor
	MJE3055	246Kb / 3P	NPN Silicon Plastic-Encapsulate Transistor
	MJE13001	247Kb / 3P	NPN Silicon Plastic-Encapsulate Transistor
	MJE13002	257Kb / 2P	NPN Silicon Plastic-Encapsulate Transistor
	MJE13002B	182Kb / 2P	NPN Silicon Plastic-Encapsulate Transistor
	MJE13002B	236Kb / 2P	NPN Silicon Plastic-Encapsulate Transistor

More results

2SC3356 Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

2SC3356 Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

Nº de peça semelhante - 2SC3356

Descrição semelhante - 2SC3356

Html Pages

1 2 3

Folha de dados Download

Ligação URL