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MPC5533 Folha de dados(PDF) 23 Page - Freescale Semiconductor, Inc |
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MPC5533 Folha de dados(HTML) 23 Page - Freescale Semiconductor, Inc |
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23 / 50 page ![]() Electrical Characteristics MPC5533 Microcontroller Data Sheet, Rev. 0.0 Freescale Semiconductor 23 3.11 H7Fb Flash Memory Electrical Characteristics Spec Table 14. Flash Program and Erase Specifications (TA = TL to TH) Spec Flash Program Characteristic Symbol Min. Typical 1 1 Typical program and erase times are calculated at 25 oC operating temperature using nominal supply values. Initial Max. 2 2 Initial factory condition: ≤ 100 program/erase cycles, 25 oC, using a typical supply voltage measured at a minimum system frequency of 80 MHz. Max. 3 3 The maximum erase time occurs after the specified number of program/erase cycles. This maximum value is characterized but not guaranteed. Unit 3 Doubleword (64 bits) program time 4 4 Actual hardware programming times. This does not include software overhead. Tdwprogram — 10 — 500 μs 4 Page program time 4 Tpprogram — 22 44 5 5 Page size is 128 bits (4 words). 500 μs 7 16 KB block pre-program and erase time T16kpperase — 325 525 5000 ms 9 48 KB block pre-program and erase time T48kpperase — 435 525 5000 ms 10 64 KB block pre-program and erase time T64kpperase — 525 675 5000 ms 8 128 KB block pre-program and erase time T128kpperase — 675 1800 7500 ms 11 Minimum operating frequency for program and erase operations 6 6 The read frequency of the flash can range up to the maximum operating frequency. There is no minimum read frequency condition. —25 — — — MHz Table 15. Flash EEPROM Module Life (TA = TL to TH) Spec Characteristic Symbol Min. Typical 1 1 Typical endurance is evaluated at 25o C. Product qualification is performed to the minimum specification. For additional information on the Freescale definition of typical endurance, refer to engineering bulletin EB619 Typical Endurance for Nonvolatile Memory. Unit 1a Number of program/erase cycles per block for 16 KB, 48 KB, and 64 KB blocks over the operating temperature range (TJ) P/E 100,000 — cycles 1b Number of program/erase cycles per block for 128 KB blocks over the operating temperature range (TJ) P/E 1000 100,000 cycles 2 Data retention Blocks with 0–1,000 P/E cycles Blocks with 1,001–100,000 P/E cycles Retention 20 5 — — years |
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