STPS80H100CY datasheet(3/4 Pages) STMICROELECTRONICS

Nome de Peças	STPS80H100CY

Descrição Electrónicos	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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3 / 4 page

STPS80H100CY

3/4

1E-3

1E-2

1E-1

1E+0

100

200

300

400

500

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=110°C

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

δ=tp/T

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse (per diode).

10203040

5060708090

100

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

VR(V)

IR(µA)

Tj=125°C

Tj=25°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

100

0.1

1.0

5.0

VR(V)

C(nF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

500

VFM(V)

IFM(A)

Tj=25°C

Tj=125°C

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

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