STPS80H100CY

2/4

Symbol

Parameter

Value

Unit

Junction to case

Per diode

0.7

°C/W

Total

0.5

Coupling

0.3

THERMAL RESISTANCES

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

Reverse leakage current

Tj = 25

20

µA

Tj = 125

°C

7

20

mA

Forward voltage drop

Tj = 25

0.8

V

Tj = 125

0.65

0.7

Tj=25

0.94

Tj = 125

0.79

0.84

Pulse test :

* tp=5ms,

δ <2%

** tp = 380 µs,

δ <2%

To evaluate the maximum conduction losses use the following equation :

2

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

0

5

10

15

20

25

30

35

40

45

50

0

5

10

15

20

25

30

35

IF(av) (A)

PF(av)(W)

T

tp

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

0

25

50

75

100

125

150

175

0

5

10

15

20

25

30

35

40

45

50

Tamb(°C)

IF(av)(A)

Rth(j-a)=5°C/W

Rth(j-a)=Rth(j-c)

T

tp

Fig. 2: Average forward current versus ambient

temperature (

δ=0.5, per diode).

When the diodes 1 and 2 are used simultaneously :

0

0.2

0.4

0.6

0.8

1

1.2

0

25

50

75

100

125

150

T (°C)

j

P(t )

P

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

1

0.1

10

100

1000

1

t (µs)

p

P(t )

P

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.