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STM32F103X8 Folha de dados(PDF) 50 Page - STMicroelectronics |
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STM32F103X8 Folha de dados(HTML) 50 Page - STMicroelectronics |
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50 / 84 page ![]() Electrical characteristics STM32F103xx 50/84 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = −40 to 105 °C unless otherwise specified. Table 28. Flash memory endurance and data retention Table 27. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Values based on characterization and not tested in production. Unit tprog 16-bit programming time TA = −40 to +105 °C 40 52.5 70 µs tERASE Page (1kB) erase time TA = −40 to +105 °C 20 40 ms tME Mass erase time TA = −40 to +105 °C 20 40 ms IDD Supply current Read mode fHCLK = 72 MHz with 2 wait states, VDD = 3.3 V 20 mA Write / Erase modes fHCLK = 72 MHz, VDD = 3.3 V 5mA Power-down mode / Halt, VDD = 3.0 to 3.6 V 50 µA Vprog Programming voltage 2 3.6 V Symbol Parameter Conditions Value Unit Min(1) 1. Values based on characterization not tested in production. Typ Max NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention TA = 85 °C, 1 kcycle (2) 2. Cycling performed over the whole temperature range. 30 Years TA = 105 °C, 1 kcycle (2) 20 TA = 55 °C, 10 kcycles (2) 20 |
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