AP150N06HFIPIT

60V N-Channel Enhancement Mode MOSFET

AP150N06HF/P/T RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

60

65

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=60V, VGS = 0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS = ±25V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

2

3

4

V

RDS(on)

Static Drain-Source on-Resistance

VGS=10V, ID=30A

-

4.0

5.5

mΩ

Ciss

Input Capacitance

VDS=25V, VGS=0V,

f=1.0MHz

-

5672

-

pF

Coss

Output Capacitance

-

392

-

pF

Crss

Reverse Transfer Capacitance

-

352

-

pF

Qg

Total Gate Charge

VDS=30V, ID=30A,

VGS=10V

-

103

-

nC

Qgs

Gate-Source Charge

-

15

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

32

-

nC

td(on)

Turn-on Delay Time

VDS=30V, ID=30A,

RG=1.8Ω, VGS=10V

-

12

-

ns

tr

Turn-on Rise Time

-

8

-

ns

td(off)

Turn-off Delay Time

-

49

-

ns

tf

Turn-off Fall Time

-

15

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

120

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

480

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=30A, dI/dt=100A/μs

-

27

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

48

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =35V, VG =10V, R G =25Ω, L=0.5mH, IAS =55A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.