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AP150N06HT Folha de dados(PDF) 1 Page - A POWER MICROELECTRONICS

Nome de Peças AP150N06HT
Descrição Electrónicos  60V N-Channel Enhancement Mode MOSFET
PDF  9 Pages
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Fabricante Electrônico  APME [A POWER MICROELECTRONICS]
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AP150N06HFIPIT
60V N-Channel Enhancement Mode MOSFET
AP150N06HF/P/T RVE1.1
永源微電子科技有限公司
Description
The AP150N06HF/P/T uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V. This
device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 60V ID =150A
RDS(ON) < 5.5mΩ @ VGS=10V （Type：4.0mΩ）
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP150N06HF
TO220F-3L
AP150N06HF XXX YYYY
1000
AP150N06HP
TO220-3L
AP150N06HP XXX YYYY
1000
AP150N06HT
TO263-3L
AP150N06HT XXX YYYY
800
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Value
Unit
VDS
Drain source voltage
60
V
VGS
Gate source voltage
±20
V
ID@TC=25
℃
Continuous Drain Current, VGS @ 10V1
150
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V1
79
A
IDM
Pulsed drain current2)
500
A
IAS
Diode forward current
55
A
PD
Power dissipation
150
W
EAS
Single pulsed avalanche energy)
225
mJ
Tstg
，Tj
Operation and storage temperature
-55 to 150
℃
RθJC
Thermal resistance, junction-case
0.83
℃/W
RθJA
Thermal resistance, junction-ambient4)
62.5
℃/W


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