H4RN10FP datasheet(3/5 Pages) HUIXIN

Nome de Peças	H4RN10FP

Descrição Electrónicos	N-Channel 100 V MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

Página de início	http://www.hxkj.hk

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Electrical Characteristics Diagrams

Fig.4 Typical Gate-Charge

(

)

Gate-Charge-Q

V =50V

D S

I =25A

Fig.1

output characteristics

Typical

( )

Drain-Source Voltage-V

D S

100

T =25

°C

t =﹤200μs

V =5V

G S

150

175

250

V =5.5V

G S

V =6V

G S

V =7V

G S

V =10V

G S

V =8V

G S

Fig.2

transfer characteristics

Typical

Gate-Source Voltage-V

(V)

G S

100

T =25

°C

150

175

250

T =150

°C

Drain-Source Voltage-V

(V)

D S

100

Fig.3 Typical Capacitance vs. D-S Voltage

V =0

G S

f =100kHz

Crss

Coss

Ciss

Fig.5 Drain-source on-state resistance

-25

125

(

)

Junction Temperature-T

°C

150

100

I =25A

V =10V

G S

-50

Fig.6 Drain-source on-state resistance

250

( )

Drain current-I

200

150

100

V =7V

G S

V =8V

G S

V =10V

G S

V =6.5V

G S

V =6V

G S

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