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H4RN10FP Folha de dados(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Nome de Peças H4RN10FP
Descrição Electrónicos  N-Channel 100 V MOSFET
PDF  5 Pages
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Fabricante Electrônico  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Página de início  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H4RN10FP Folha de dados(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Electrical Characteristics (T =25
unless otherwise specified)
J
°C
Parameter
V
Unit
V(BR)DSS
VGS(th)
IDSS
Ciss
Symbols
Drain-Source Breakdown Voltage
Gate Threshold Voltage
100
Typ.
Test Conditions
V
=0, I =250μA
G S
D
td(on)
tf
Max.
Min.
V
2.0
4.0
V
=V
, I =250μA
G S
D S
D
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
μA
V
=0, V
=±20V
D S
G S
nA
±100
19
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2392
862
pF
V
=0
G S
V
=50V
D S
f=100kHz
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
15
7
26
7.2
ns
V
=50V
D S
10V
V
=
G S
I =25A
D
2Ω
R
=
(
)
G e x t
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
34
10
7.8
nC
V
=50V
D S
10V
V
=
G S
I =25A
D
μA
V
=100V, V
=0,T =25°C
D S
G S
J
1.0
Body Diode Characteristics
Parameter
Unit
VSD
Symbols
Diode Forward Voltage
Typ.
Test Conditions
V
=0, I =20A
G S
S
Max.
V =50V
R
I =25Α
S
di/dt=400A/μs
ns
nC
37
Qrr
Reverse Recover Time
Reverse Recovery Charge
124
Min.
V
RDS(on)
Drain-Source On-State Resistance
3.6
4.8
mΩ
V
=10V, I =25A
G S
D
IGSS
Gate resistance
RG
V
=100V, V
=0,T =125°C
D S
G S
J
1.85
f = 1 MHz, Open drain
Ω
Coss
Crss
Gate plateau voltage
Vplateau
4.6
V
Qg
Qgs
Qgd
tr
td(off)
1.1
A
Irrm
Peak reverse recovery current
5.8
trr
Note
( )
1
Calculated continuous current based on maximum allowable junction temperature.
( )
2
Repetitive rating; pulse width limited by max. junction temperature.
( )
3
Pd is based on max. junction temperature, using junction-case thermal resistance.
2
( )
4 The value of R
is measured with the device mounted on 1 in FR-4 board with 2oz. Copper,
θ J A
in a still air environment with T =25 °C.
A
( )
5
V
=50V, V
=10 V, L=0.3 mH, starting T =25 °C
D D
G S
j
www.hxkj.hk
+86-769-23622090
huixin@hxkj.hk
Rev.02
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